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IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Symbol
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
V DS = 20 V; I D = 0.5 I D25 , pulse test
8
15
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3900
250
pF
pF
1
2
3
C rss
t d(on)
19
26
pF
ns
t r
t d(off)
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
R G = 5 Ω (External)
29
62
ns
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
27
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A 1
Q g(on)
61
nC
A 4.7 5.3
2.2 2.54
.185 .209
.087 .102
A 2
b 1
b 2
Q gs
Q gd
R thJC
R thCS
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
(TO-247, TO-3P)
18
20
0.21
nC
nC
0.31 ° C/W
° C/W
2.2 2.6
b 1.0 1.4
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
e 5.20 5.72
L 19.81 20.32
0.205 0.225
.780 .800
Source-Drain Diode
Characteristic Values
L1 4.50
.177
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.140 .144
0.232 0.252
.170 .216
I S
I SM
V SD
t rr
Q RM
I RM
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25A,
-di/dt = 100 A/ μ s
V R = 100V
0.4
5
14
40
1.5
250
A
A
V
ns
μ C
A
S 6.15 BSC
TO-268 (IXFT) Outline
242 BSC
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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